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| LED - Chip 02.04.2008 Radiation Infrared 1000 EL-870-21 rev. 01 Electrodes N (cathode) up Type DDH Technology AlGaAs/AlGaAs typ. dimensions (m) typ. thickness 160 (25) m 1000 cathode gold alloy, 1.5 m anode gold alloy, 0.5 m structured, 25% covered PoC-05 Optical and Electrical Characteristics Tamb = 25 unless otherwise specified C, Parameter Forward voltage Forward voltage 1 Test conditions IF = 20 mA IF = 350 mA IR = 100 A IF = 20 mA IF = 350 mA IF = 20 mA IF = 20 mA IF = 20 mA Symbol VF VF VR e e P 0.5 tr , tf Min Typ 1.3 1.5 Max 1.5 1.8 Unit V V V Reverse voltage Radiant power Radiant power 1 5 3.5 70 860 5 90 870 35 20 880 mW mW nm nm ns Peak wavelength Spectral bandwidth at 50% Switching time 1 Measured on bare chip glued on a O 8 x 1mm Cu header with EPIGAP equipment Labeling Type EL-870-21 Lot e(typ) [mW] VF(typ) [V] P(typ) [nm] Quantity Packing: Chips on adhesive film with wire-bond side on top We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each application by the customer themselves. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 1 of 1 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 |
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